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- self aligned gate mos 自对准栅金属氧化物半导体
- self aligned gate 自对准栅
- self aligned gate fet 自对准栅场效应晶体管
- Multifunction Self Aligned Gate 多功能自对准门电路
- A high voltage power MOSFET with double Si gate is developed using self aligned ion implantation process. The fabricated device has a BV DS of 120 V, an output power of 5.1 W, a power gain of 8 dB, a transconductance of 650 mS and an f T of 270 MHz. 采用硅栅结构的自对准离子注入工艺,研制成功了源漏击穿电压BVDS为120V、输出功率5.;1W、功率增益8dB、跨导650mS、截止频率fT为270MHz的高压双栅功率MOSFET器件。
- silicon gate self aligned junction isolated CMOS 硅栅自对准结隔离互补金属氧化物半导体
- Then, we show the feasible application of nickel silicide on photo detector and design the so-called photo gate MOS transistor to do further study in the future work. 最后,我将提出矽化镍在光侦测器上的可行性并为了更进一步的研究而设计出所谓的光闸极金氧半电晶体。
- refractory metal gate MOS integrated circuit 难熔金属栅MOS集成电路
- silicon gate MOS integrated circuit 硅栅MOS集成电路
- polycrystalline silicon gate mos 多晶硅栅金属氧化物半导体
- ion implantation gate MOS integrated circuit 离子注入MOS 集成电路
- self aligned photoresist process 自对准光刻工艺
- IGMOSFET; Isolated Gate MOS Field Effect Transistor 绝缘栅金属氧化物半导体场效应晶体管
- self aligned polysilicon process 自对准多晶硅工艺
- avalanche injection stacked gate mos 雪崩注入多层栅金属氧化物半导体
- self aligned semiconductor device 自对准型半导体掐
- molybdenum gate MOS integrated circuit 钼栅MOS集成电路
- advanced polysilicon self aligned process 改进型自对准多晶硅栅工艺
- ion implantation gate MOS intergrated circuit 离子注入MOS集成电路
- polysilicon self aligned process 多晶硅自对准工艺
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