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- electronic band gap 电子能带距离
- A novel BWO with photonic band gap structure[J]. 引用该论文 陈波;钱宝良;钟辉煌.
- He is the keyboard player in this electronic band. 他是这个电声乐队的电子琴手。
- Photonic crystals are a new kind of materials with photonic band gap. 光子晶体是一种具有光子带隙的新型功能材料。
- A novel photonic band gap (PBG) structure is presented in this paper. 提出一种新型微带光子带隙结构。
- Electronic structure analysis shows that the doping S could substantially lower the band gap of TiO_2 by the presence of an impurity state of S3p on the upper edge of valence band. 对TiO_(2-x)S_x的电子结构分析表明,其带隙相对于未掺杂TiO_2有所减小,这是由S3p杂质态在价带上边沿的出现造成的。 可以推断,由S3p杂质态到导带的跃迁造成了实验观测到的S掺杂TiO_2吸收边沿的红移。
- The torsional angle, bridge bond length, bond length alternation, and intramolecular charge transfer were simulated and correlated with the electronic properties, i.e.HOMO, LUMO level, and band gap. 以理论分析探讨电子特性与分子扭转角度、施体-受体间键长、单双键键长改变量、与分子间电荷转移的关连性。
- In studio recordings, new techniques made possible effects that not even an electronic band could produce live. 在录音室录制时,新技术有可能制作出甚至电子乐队的表演现场都演奏不出的效果。
- And in studio recordings, new techniques made possible effects that not even an electronic band could produce live. 而且在工作场所录音中,新的技术作了可能的效果,不甚至一条电子的乐团可以现场生产。
- The optical band gap energy of CuInS2 thin films, deduced from the optical transmission spectrum, was 1. 50 eV. 结果表明;所制得的样品为四方结构的多晶CuInS_2薄膜;Cu/In比接近化学计量比;其光学禁带宽度为1.;50eV。
- The optical band gap increases from 3.21 eV to 3.25 eV as increasing dopant concentration from 0.01% up to 1%. 薄膜光学带隙随掺杂原子分数的提高从3.;21 eV增大到3
- But CIS possesses band gap energy equal to 1.04eV, which is not within the maximum solar absorption region. 太阳光的吸收要求材料的最佳带隙在1.;45eV左右;不过CuInSe_2的带隙为1
- Our results demonstrate that lattices compounding can create broad complete photonic band gap. 设计了几种一维光子晶体光通信器件。
- The reduction of Si band gap and the enhancement of light intensity under external tensile strain are observed. 在施加外加的伸展应力之下,我们观察到矽的能隙缩减还有光强度的增加。
- Tunable band gap is a new and important field in photonic crystals research because of many potential applications. 可调光子晶体由于其潜在的应用价值成为现今光子晶体研究中的一个热点。
- There are resonance modes in the photonic band gap when defects are introduced to the integrity photonic crystals. 完整二维光子晶体中引入点缺陷后,在光子晶体禁带中会有共振模出现;
- The band gap's broaden is apparent when the larger refractive index layer is graded. 改变高折射率层的几何厚度,光子带隙的拓宽更为显著。
- Due to quantum confinement effect,band gap of semiconductor nanocrystals(NCs) is dependent on the particle size. 由于量子限域效应,半导体纳米晶的能带宽随粒子大小而改变。
- In accordance with the effective mass theory, the magnetic Kronig-Penny potential was used to solve the electronic band structure of GaAs/Al?xGa? 1-xAs superlattice in a periodic magnetic field. 在有效质量理论近似下;采用磁Kronig-Penny势场;精确求解了GaAs/AlxGa1-xAs超晶格中的电子在周期性磁场中形成的能带结构.
- All internal reference voltages are derived from a temperature compensated and trimmed, on-chip band gap circuit. 所有的内部参考电压都做了温度补偿和平衡,芯片内置带隙电路。
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