Ultra-thin Si 3N 4/SiO 2(N/O) stack gate dielectric with EOT of 2.1nm is fabricated successfully,and its characteristics are investigated.
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成功制备了EOT(equivalentoxidethickness)为 2 1nm的Si3 N4/SiO2 (N/O)stack栅介质 ；并对其性质进行了研究 .
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海词词典，十七年品牌
