This paper focuses on the preparation of cubic boron nitride (c-BN) thin films, nucleation mechanism of c-BN thin films, their optical gaps, and the electrical characteristics of boron nitride (BN)/Si heterojunctions (include n-p and p-p heterojunctions).

• 本文主要研究了立方氮化硼(c-BN)薄膜的制备、成核机理、光学带隙以及氮化硼(BN)/Si n-p和BN/Si p-p薄膜异质结的电学性质。