The silicon carbide epitaxial layer may have a thickness and a doping level so as to provide a charge in the silicon carbide epitaxial region based on the surface doping of the blocking layer.

• 碳化硅外延层可以有一厚度和一掺杂水平使得在阻挡层表面掺杂的基础上提供碳化硅外延区内的电荷。