The ground states of methyl vinyl siloxane under different intense electric fields ranging from 0 to 0.04 a. u. were optimized using density functional theory DFT/B3P86 at 6-311++G(d,p) level.

• 采用密度泛函B3P86方法在6-311++G(d；p)基组水平上优化得到了沿分子轴方向不同外电场(0-0.；04a