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The data of damage threshold of a transistor by electromagnetic pulses were obtained with square wave injection and analysed. An evaluation of the lower limit range of the damage threshold was made using the boundary standard difference (BSD).
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本文对方波注入法取得的晶体管电磁脉冲损伤阈值数据进行了分析,采用界限范围标准离差(BSD),进行损伤阈值下限范围估计。
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