The 360 cm-1 peak is attributed to the O implantation induced defect complexes(vacancies,interstitial,or anti-sites in the host). The appearance of the 360 cm-1 mode results in the decrease of the Er 3+-related infrared PL of GaN:Er+O.

• 由于360cm-1模的缺陷出现；从而导致Er+O共注入GaN薄膜红外光致发光(PL)强度的下降.