It was found that there exist many nanometer-sized holes on the surface of SiN buffer layers, and such porous SiN layers probably could enhance the lateral growth.

• 在氮化矽缓冲层表面可以发现许多奈米尺寸大小的孔洞，其特性相信可提升之后氮化镓侧向的磊晶成长。