By taking into account the unique features of narrow band-gap Hg_(1-x)Cd_xTe, forward and reverse I-V characteristics and the temperature dependence of R_0A product determined by surface channel current are calculated as a function of the gate bias.

• 在考虑了窄禁带HgCdTe的特殊性质后；计算了表面沟道电流决定的P-N结正、反向I-V特性和R_0A的温度特性；以及它们与表面状态的关系.