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- At last, some propositions for designing monolithic ferroelectric thin film IR-FPA are also presented. 最后，对设计和研制单片式铁电薄膜IR-FPA器件提出了一些看法和建议。
- In order to enhance the reliability and repeatability of the ferroelectric thin film preparation, the liquid source MOCVD system is designed based on PLC. 摘要为了提高制备铁电薄膜的可靠性和重复性，设计了基于PLC控制的液态源MOCVD系统。
- Patel, A. and Obhi, J. S., 1995, “Ferroelectric thin film for integrated sensor and memory devices,” GEC Journal of Research, Vol. 12, No. 3, pp. 141-152. 刘俊廷，”砷化铟金属绝缘体半导体电容与红外线光侦检器之研究”，国立台湾大学电机工程研究所硕士论文，1998。
- ENERGY GAP AND INFRARED ABSORPTION OF LAYER-STRUCTURE PEROVSKITE FERROELECTRIC THIN FILMS? 层状类钙钛矿结构铁电薄膜的禁带宽度及红外吸收研究?
- Effect of the bottom electrodes on the capacitors of PYZT ferroelectric thin films. 底电极对PYZT铁电薄膜电容器的影响。
- The ferroelectric thin films had good crystallization behaviour,excellent dielectric and pyroelectric properties. 该类铁电薄膜具有良好的结晶特性、优异的介电和热释电性能。
- In the preparing process of these devices, the micropatterning of ferroelectric thin films is very important. 在这些器件的制作过程中，铁电薄膜的微图形化是非常重要的一环。
- Ferroelectric thin films as the highly functional materials are nowadays become one of the research hotspots. 高性能铁电氧化物薄膜是当今功能材料的研究热点之一。
- Fabrication of uncooled infrared focal plane array BST ferroelectric thin films and properties[J]. 引用该论文 刘梅冬;刘少波;曾亦可;李楚容.
- This paper chiefly introduced several major micropattern techniques of ferroelectric thin films and related researc... 本文简要介绍了几种重要的铁电薄膜微图形化方法及有关研究结果，并比较了这些方法的优缺点。
- With the steady research and development of novel metallorganic precursors, the MOCVD film fabrication technique for ferroelectric thin films has experienced a rapid development in recent years. 随着新型MO源的不断研究与开发,利用MOCVD技术制备高质量铁电薄膜材料得到了快速的发展。
- BaTiO3(BTO)ferroelectric thin films were deposited directly on Si(100) single crystal substrates with laser molecular beam epitaxy(LMBE). 利用激光分子束外延(LMBE)方法在Si(100)基片上直接生长BaTiO3(BTO)铁电薄膜。
- In this paper,the structure,principle,performance and character of four kinds of typical ferroelectric thin films phase shifters are introduced. 铁电薄膜移相器响应速度快、成本低、功耗和体积小,是一种模拟移相器,非常适合应用于相控阵天线特别是共形阵天线。
- multilayer ferroelectric thin film 多层铁电薄膜
- The Study of the Bi-Layered Ferroelectric Thin Films Structure of High Breakdown Voltage and Low Leakage Current , and the Fabrication of Memory Devices. 高介电薄膜材料及应用---靶材之提供与测试系统之建立---高耐压低漏电流双层铁电薄膜及记忆体元件之制造
- In this thesis, Scanning Force Microscopy (SFM) was used to study the nanoscale electric phenomena of the surface and interface properties of ferroelectric thin films. 本论文利用扫描力显微镜研究了铁电薄膜表面与界面的电势及电畴等微区性质。
- Multiplayer ferroelectric thin films BIT/PZT/BIT,PZT/BIT and BIT were deposited on (100) p?type silicon wafers by pulsed excimer laser. ?I?V? loop and ?P?V? loop were obtained. 利用准分子激光原位淀积方法制备了BIT/PZT/BIT,PZT/BIT和BIT层状铁电薄膜,获得了电流密度-电压(I-V)回线和极化强度P-V电滞回线。
- Pb(Zr,Ti)O3 ferroelectric thin films and their compositionally graded thin films were prepared on LNO / Pt / Ti / SiO2 /Si substrates by Sol-gel method. 与传统薄膜相比,成分梯度薄膜是指在薄膜纵向方向上,其成分和结构都是有控制地连续改变的。
- The PMN-PT relaxor ferroelectric thin films were prepared,using inorganic salt as raw material,citric acid and EDTA as complex chelating agent,ethandiol as solvent. 以无机盐为原料,柠檬酸和EDTA为复合螯合剂,乙二醇为溶剂制备PMN-PT弛豫铁电薄膜,研究了复合金属有机盐前驱物的性质对薄膜结构和成膜质量的影响。
- Perovskite ferroelectric thin films have been extensively studied because of their applications in nonvolatile memories.However, the fatigue problem is the main hindrance to their applications. 钙钛矿型铁电薄膜由于在非易失存储器方面的应用而受到广泛研究,但疲劳问题是影响其应用的主要障碍。
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海词词典，十七年品牌
