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- dopant predeposition 掺杂剂预淀积
- To treat(a semiconductor)with a dopant. 加入掺杂剂用掺杂剂给(半导体)涂上保护层
- To treat(a semiconductor) with a dopant. 加入掺杂剂用掺杂剂给（半导体）涂上保护层
- Uses:As an activator of phosphor and dopant of garnet. 用途：用于荧光粉的活化剂和柘榴石的添加剂。
- The OLED can only emit red when the dopant concentration is 8%. TPP掺杂浓度为8%25时,为饱和的红光发射;
- E ecially familiar with jewelry and purchase dopant material. 特别是对首饰方面以及采购合金材料方面熟练。
- Dopant distribution in LDD region is getting closer to substrate surface. LDD区域中的杂质分布越来越靠近衬底表面。
- Azo-dye dopant Photo-Induced Aligning Layer for Liquid Crystal Cells[J]. 引用该论文 刘绍锦;张俊瑞;凌志华.
- Autotransfusion is mainly divided as three way: predeposit, hemodilite and withdray. 自体输血主要分为贮存式、收式和稀释式3种方式。
- Autotransfusion is mainly divided as three way:predeposit,hemodilite and withdray. 自体输血主要分为贮存式、回收式和稀释式3种方式。
- Doping- The process of the donation of an electron or hole to the conduction process by a dopant. 掺杂-把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。
- Effect of borosilicate glass dopant on electrical characteristics of ZnO varistors. 硼硅玻璃掺杂对ZnO压敏电阻器电性能的影响。
- Typical of the dopant chemistry is the reaction for arsine, which is depicted with the deposition process in Fig. 9. 砷化三氢的反应是典型的掺杂化学反应，图9显示了该反应的淀积过程。
- Additional contributions to the refractive index are expected to come from the dopant(6. 8)as well as from the electro-optic effect. 预料其它对折射率的影响来自掺杂剂以及电光效应。
- The optical band gap increases from 3.21 eV to 3.25 eV as increasing dopant concentration from 0.01% up to 1%. 薄膜光学带隙随掺杂原子分数的提高从3.;21 eV增大到3
- Doping - The process of the donation of an electron or hole to the conduction process by a dopant. 掺杂-把搀杂剂掺入半导体,通常通过扩散或离子注入工艺实现。
- More than twenty doped KTP crystals with different dopant and different dopingconcentration were grown by flux method. 采用高温溶液法，我们先后生长出了二十余块掺质离子种类不同，掺质浓度不同的掺质KTP晶体。
- Four kinds of two organic dopant TGS series crystals have been grown by slow cooling method from aqueous solution. 本文采用水溶液缓慢降温法生长了4种双有机取代基TGS系列晶体。
- Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. 搀杂剂-可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。
- Post LDD implant PR remove process is becoming critical as its behavior on dopant loss may impact device performance. 由于杂质丢失带来的表现将影响到器件的性能，LDD离子注入PR去除后工艺正变得越来越重要。
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