The CeO_2 and Y_2O_3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. 采用反应溅射的方法在具有立方织构的Ni基底上制备了CeO2,Y2O3缓冲层。
In this article, we systemically discuss the effect of deposition parameters on prepared VO2 films of reactive magnetron sputtering. 本文系统研究了反应磁控溅射制备VO2薄膜过程的各个工艺参数对沉积膜的影响。
At present, they have various deposition methods for prepared VO2 films and reactive magnetron sputtering method is relatively perfect. 目前制备VO2膜有许多方法，但比较理想的方法是采用磁控溅射法。
In this paper, CIO thin film was prepared by DC reactive magnetron sputtering method in JGP450 type high vacuum magnetron sputtering apparatus, the surface morphology and structure of the CIO thin film were analyzed by AFM, XRD and XPS. 本文在JGP450型高真空磁控溅射台上,采用直流反应磁控溅射法制备了CIO薄膜,用AFM、XRD和XPS分析了样品的表面形貌、组织结构、化学态和元素价态。
TiO 2 thin films with the thickness of 300nm were deposited,at a total pressure of 0.80Pa in mixed O 2 and Ar atmosphere(O 2 /Ar :0.10,0.20,0.30),on SiO 2 -coated glass substrates by DC reactive magnetron sputtering. 在工作气压为0.