With appropriate Ga content in CIG precursors, the atomic ratio of Cu/( In + Ga) can be close to 1:1; adjusting the Ga content in the precursor results in a control of Cu/(In + Ga)ratio of the CIGS films with uniformly distributed constituent elements.

• 结果表明,通过调节CIG前驱膜的Ga含量可制备得到 Cu/(In+Ga)原子比接近1,且Ca/(In+Ga)比例可调的成分分布均匀的CIGS薄膜。