Using the scattering theoretical approach based on the semi-empirical tight binding Green function method, we identified the large stress anisotropy as the primary driving force of defects on Sb/Si(001) (Chapter 3).

• 第三章中我们用基于Chadi模型和紧束缚格林函数的方法计算表面应力,发现Sb/Si(001)表面的缺陷是表面应力的各向异性太大而引起的。