Traps in annealed SI InP are detected by the spectroscopy of photo induced current transient. The results indicate that there are fewer traps in IP annealed undoped SI InP than those in as grown Fe doped and PP undoped SI InP.

• 光激电流谱的测量结果表明 :在 IP气氛下退火获得的半绝缘磷化铟中的缺陷明显比 PP- SI磷化铟的要少 .