Titanium nitride films were deposited on silicon(100) substrate at room temperature with various substrate bias voltages (corresponding to various impact energy) by energetic cluster impact (ECI).

• 在室温下，以硅（100）为衬底，在不同的衬底偏压（即团簇不同碰撞能量）的条件下，用荷能团簇碰撞沉积方法制备了TiN薄膜。