This combination can provide higher functional density and offers new circuit opportunities such as a DRFM on a chip, and low-power highspeed SRAMS using HBT driving circuitry and FET memory cells.

• 如此的结合能够提供高功能密度，以及造就如同利用HBT驱动电路和FET内存的芯片DRFM和低电源高速SRAM那样的新型电路的机会。