The structure of parallel combination of resonant tunneling diode(RTD)and high electron mobility transistor(HEMT)is a basic element of recent high speed RTD digital circuit.

• 由共振隧穿二极管(RTD)与高电子迁移率晶体管(HEMT)相并联组成的结构是构成当前RTD高速数字电路常用的基本单元。