The results indicate that all the chelating agents of PAA,HEDP and AMPS can obviously reduce Cu deposition on silicon wafer surface,and the ability to reduce Cu deposition by 83%,79%,44% respectively.

• 结果表明；PAA、HEDP和AMPS的加入都能明显减少金属铜在硅片表面的沉积量；去除率分别为83%25、79%25和44%25.