The relationship between the side-wall roughness of SOI rib-waveguide etched by C4F8/SF6/O2 inductively coupled plasma (ICP) and the etching parameters is studied.

• 摘要研究了以C4F8/SF6/O2为刻蚀气体，利用ICP刻蚀技术制作SOI脊形光波导过程中，刻蚀参数与侧壁粗糙度的关系。