The preliminary eighty unit cells two-color HgCdTe infrared detector was obtained by B +-implantation, mesa etching, side-wall metallization, side-wall passivation and hybridization.

• 通过B+ 注入、台面腐蚀、爬坡金属化、台面侧向钝化及互连等工艺 ；得到了 80元的原理型HgCdTe红外双色探测器 .