The physical mechanism of some conclusions is presented so as to give instructions to the modification on device geometry and outer circuit which aims at improving the durability of BJT under EMP.

• 本文对部分结论给出了理论解释，以期未来能以此为依据调整器件结构、改变外电路形式，从而提高晶体管对电磁脉冲耐受性。