The most important defect in large size ingots is void, which can degrade the gate oxide integrity (GOI), so as to affect the yields and stability of devices and 1C.

• 大直径硅单晶、硅片中的最重要的缺陷之一是VOID，它会严重影响硅器件、集成电路的生产成品率和性能稳定性。