The kinks have been avoided from optimizing the longitudinal structure,adopting narrow active region and using C as p dopant for the lasers operating at 50 mW with 100 mA injection.

• 通过优化激光器纵向结构设计 ,采用较窄的有源区 ,在 MOCVD结构生长中用碳作 P型掺杂 ,制造出来的未镀膜激光器在 10 0 m A注入电流下输出光功率 5 0 m W未出现 P- I特性的扭折。