The experimental results indicate:hydrogen decreases the Schottkybarrier height(SBH)of Au/n-Si by0.13eV,the SBH of Schottcky barrier containinghydrogen(SB(H))can be controlled by zero bias annealing(ZBA)and reverse biasannealing(RBA),i.

• 实验结果表明：氢能使Au/n－Si的肖特基势垒高度下降0.；13eV； 含氢的肖特基势垒的高度可以被零偏退火与反偏退火所控制，即零偏退火使含氢的肖特基势垒的高度降低，而反偏退火使含氢的肖特基势垒的高度升高；