The effect of rapid thermal annealing (RTA) ambient on denuded zone and oxygen precipitates in Czochralski(CZ) silicon wafers is studied in this paper.N2 and a N2/NH3 mixture are used as RTA ambient.

• 研究了N2和N2/NH3混合气两种不同气氛快速退火处理硅片对洁净区和氧沉淀分布的影响.；研究发现:N2/NH3混合气氛处理的硅片在后序热处理中表层形成很薄的洁净区同时体内形成高密度的氧沉淀;