The drift level of flat band voltage and threshold voltage were measured by SOFRON-1505C model X-ray device after X-ray radiating three kind MOS capacitors CD130, CE28, CG28. The effect of X-ray irradiation on MOS capacitors was analyzed.

• 作者利用SOFRON-1505C型X光机；对3种MOS电容CD130；CE28；CG28受X射线后的平带电压和阀电压的飘移量进行测试和分析；从而分析X射线辐射对MOS电容的影响.