The device structure of the polymer was ITO /PEDOT/PVK / P3FS/Ba /Al,The external quantum yield of the device reaches 1.99%.

• 其薄膜PL最大发射峰在516nm；绝对PL效率为86%25；EL峰在542nm；器件结构为ITO/PEDOT/PVK/P3FS/Ba/Al；其EL最大外量子效率达到1.；99%25。