The corresponding curves are given here. With these results in mind, 3-mm band P+NN+ IMPATT and 8-mm band P+PNN+ DDR avalanche devices have been designed and developed resulting in excellent performence.

• 已利用这些结果设计和研制成3mm P~+NN~+崩越二极管和8mmP~+PNN~+双漂移崩越二极管；获得了良好性能.