The characteristic of hydrogenated amorphous silicon(a-Si:H)field effect transistor(FET)is easily affected by environmental factors. Temperature,moisture and exposure would influence its property.

• 氢化非晶硅（a－Si：H）场效应晶体管（FET）的特性对环境因素较为敏感，光照、湿度和温度等都会对其产生影响。