The STI-induced mechanical strain enhances the GIDL current including the trap-assisted tunneling (TAT) component at low voltage and the band-to-band tunneling (BBT) component at high voltage.

• 此外并进一步研究在二氧化铪以及氮氧化矽介电层元件中，浅沟槽隔离(STI)所产生之应力对于闸极引发汲极漏电流之影响。