The MISFET device was prepared. The input and output character of the device are obtained. The type of device is fixed, and the general parameters are calculated.

• 成功制备了HgCdTe MISFET器件并获得了MISFET器件输入、输出特性，确定了MISFET器件类型，对MISFET的基本参数进行了计算。