Silicon on insulator(SOI) structure, as a very large scale integrated circuit(VLSI) wafer, has attractive features such as radiation-hardening, no parasitic capacitance and latch-up effect.

• 绝缘体上生长的薄单晶硅膜(SOI)具有良好的横向绝缘、抗辐照、无锁存效应和无寄生电容，并能有效地提高硅集成电路的速度和集成度，在深亚微米VLSI技术中，具有很大的优势和潜力。