Si?3N?4 has a higher dielectric constant, k, than that of SiO?2. New model and material parameters were added to 2?D device simulator PISCES?II.

• 使用Si3N4材料作为栅介质,利用其介电常数高于SiO2的特性,可以在一定时期内有效地解决隧穿电流的问题。