Raman spectra and Photoluminescence spectra are used to investigate the influence of carbon doping on the structural and optical properties of GaN films grown by the hydride vapor phase epitaxy (HVPE).

• 利用喇曼光谱和光致发光谱 ；对采用氢化气相外延淀积方法在MOCVDGaN衬底上生长的掺碳GaN样品的光学性质进行了研究 .