Next, as the thickness of ONO layer thinner than that of poly-Si channel, the SONOS-TFT with nanowire channels is surrounded by poly-gate.

• 接下来，当氧化矽-氮化矽-氧化矽堆叠闸极介电层的膜厚比多晶矽薄膜之后度还要薄时，奈米线结构SONOS-TFT的奈米线通道会被多晶矽闸极给包覆。