It shows that even if using the RF power(13.56 MHz) as the excitation of plasma,the compressive silicon nitride film can be obtained easily.

• 通常认为高频下制备得到的氮化硅膜呈现张应力；但是通过实验；表明即使应用高频(13.；56MH z)作为激励源同样可以沉积出呈现压应力的氮化硅薄膜。