It is found that the variation of Si radical concentration in the plasma causes the decrease of the film growth rate with the increase of NH3 flow rate.

• 结果表明：随着NH3流量的增加，氮化硅薄膜的生长速率呈下降趋势，这主要是由于等离子体中的气相前驱成分之一硅基团浓度的不断下降所导致的；