Indium nitride (InN), with its wurtzite crystal structure and 0.7 eV direct band gap, is a promising III-V compound semiconductor for high-frequency and high-speed devices and optical communication.

• 氮化铟材料拥有0.；7电子伏特的直接能隙，被预期能运用在高频高速的元件和光通讯的材料上。