In this thesis, we use TCAD simulation software to design a 450V LDMOSFET.We adjust the parameters to make the device have not only low turn-on resistance but also high breakdown voltages.

• 在本论文中，我们利用TCAD软体设计额定崩溃电压为450V的LDMOSFET，并在导通电阻与崩溃电压间取得平衡点，使其能兼顾低导通电阻与高崩溃电压。