In this thesis, AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs) grown by metal organic chemical vapor deposition (MOCVD) have been fabricated and investigated.

• 中文摘要在本论文中，我们以有机金属化学气相沉积法成长及研制砷化铝镓/砷化铟镓/砷化镓拟晶性高电子移动率电晶体。