In chapter 3, growth models for DC anodization of silicon are introduced.The ultra-thin gate oxides were prepared by anodization in H2O followed by low temperature annealing on new and recycle wafers.

• 第三章我们先介绍直流阳极氧化的成长机制,我们将以阳极氧化的方法在纯水中成长超薄闸极氧化层,在以低温热退火处理对于新与旧的矽晶圆作探讨。