For the purpose of reducing off-state current, lightly doped drain(LDD) structures were used in a p-Si TFT LCD.

• 针对多晶硅薄膜晶体管液晶显示器件关态漏电流较大的问题 ,采用源漏轻掺杂结构以降低关态时电荷的泄漏 ,增加晶体管的开关电流比值。