For fabricating semiconductor optical amplifier of polarization insensitive, a structure of the active layer was designed that is strain compensation with alternate 4 compressive and 3 tensile strain quantum wells and lattice-matched barrier layer.

• 为了制备偏振不灵敏的半导体光放大器 (SOA) ,将有源区设计为由 4个压应变、3个张应变阱层及晶格匹配的垒层InGaAsP交替组合而成的应变补偿结构。