For Au/Ge-Si02/p-Si andAu/Si-SiO,/p-Si structures, they emit EL peaked at 5lOnm when forward biaseswere greater than 6V and 6.5V, respectively, while no detectable lightemission can be observed under reverse bias.

• 对于Au/Ge-SiO_2/p-Si和Au/Si-SiO_2/p-Si结构，当所加正向偏压分别高于6V和6.；5V时都发出肉眼可见的EL，峰位均在510nm处； 在反向偏压下，没有光发出。