Epitaxial layers of InSb and InAs_xSb_(1-x)on(111)InSb and (100)GaAs substrate have been grown by MBE technique.

• 在(111)InSb 和(100)GaAs 衬底上,用分子束外延技术生长了 InSb 和 InAs_xSb_(1-x)外延层。