Due to their numerous advantages b rought by the 2DEG,Al xGa 1-xN heterostructures are the promising semiconductor chan nel candidates for the MFS field effect transistor.

• 因为 2DEG带来的各种优点 ,可以认为AlxGa1-xN/GaN异质结构在以存储器为目标的MFS场效应晶体管中有重要应用。