Due to the dual actions of chemicals corrosion and abrasive abrasion in the slurry, CMP achieves the effect of global planarization on the thin film surface of wafers.

• 抛光液中化学溶液的腐蚀与磨粒的机械磨削两者双重的作用，使得化学机械抛光能造成晶圆薄膜表面全面平坦化的效果。