Annealing processes of the Ti/SiO_2/Si system at different temperatures in nitrogen witha trace of oxygen were studied by using RBS, AES and XPS. There is no TiN formed in thesystem.

• RBS,AES,XPS分析结果证实:在有微量氧存在的氮气中,Ti/SiO_2(薄)/Si体系不同温度下退火过程均无TiN生成;